X‐ray photoelectron spectroscopy (XPS) was used to study the effects of electron beam irradiation of a multilayer film of trimethylsilane on a clean Ge(100) surface at −150°C. Core level C 1s, Si 2p, and Ge 3d photoelectrons were monitored at the same experimental conditions after various electron fluences. Electron irradiation is observed to cause an increase in the relative silicon surface concentration with a corresponding decrease in the carbon concentration. No change was evident in the surface germanium concentration, although electron irradiation resulted in an increasing concentration of C–Ge bonds with time. Simultaneously, the concentration of C–Si bonds decreased as a function of irradiation time. Growth of silicon islands is postulated as a possible explanation for this observation. The possible silicon island growth proposal is supported by the observed gradual decrease in concentration of Si–Si bonds, which would occur as the fraction of the surface covered by silicon decreases. Copyright © 2002 John Wiley & Sons, Ltd.
P. W. Wang, Y. Qi, J. H. Craig
Surface and Interface Analysis