For the normal p+/n (n+/p) structure, it is demonstrated here that an optimal base doping N d(a) = 3 (7) × 1018 cm−3 is observed, and the superior p+/n structure can achieve a higher performance.

Chinese Physics B

Based on the transport equation of the semiconductor device model for 0.524 eV GeSn alloy and the experimental parameters of the material, the thermal–electricity conversion performance governed by a GeSn diode has been systematically studied in its normal and inverted structures. For the normal p+/n (n+/p) structure, it is demonstrated here that an optimal base doping N d(a) = 3 (7) × 1018 cm−3 is observed, and the superior p+/n structure can achieve a higher performance. To reduce material consumption, an economical active layer can comprise a 100 nm–300 nm emitter and a 3 μm–6 μm base to attain comparable performance to that for the optimal configuration. Our results offer many useful guidelines for the fabrication of economical GeSn thermophotovoltaic devices.

For the normal p+/n (n+/p) structure, it is demonstrated here that an optimal base doping N d(a) = 3 (7) × 1018 cm−3 is observed, and the superior p+/n structure can achieve a higher performance.

GeSn (0.524 eV) single-junction thermophotovoltaic cells based on the device transport model