This paper presents a high isolation SPDT switch design based on new octagonal PIN diode structure in IBM7HP SiGe process. The series-shunt-shunt 6.25mum2-50mum2-50mum2 PIN diode combination is used in SPDT switch design to get high isolation for a phase array application. The switch achieves minimum isolation of 45 dB and maximum insertion loss of 0.64 dB over 10 GHz to 20 GHz covering X and Ku frequency bands
P. Sun, Le Wang, P. Upadhyaya
2005 IEEE Workshop on Microelectronics and Electron Devices, 2005. WMED '05.