High isolation 10HHz to 20 GHz SPDT switch design using novel octagonal pin diode structure

doi:10.1109/WMED.2005.1431612

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Finding

The switch achieves minimum isolation of 45 dB and maximum insertion loss of 0.64 dB over 10 GHz to 20 GHz covering X and Ku frequency bands

Paper

High isolation 10HHz to 20 GHz SPDT switch design using novel octagonal pin diode structure

Citations: 8

2005

Full text

Abstract

This paper presents a high isolation SPDT switch design based on new octagonal PIN diode structure in IBM7HP SiGe process. The series-shunt-shunt 6.25mum2-50mum2-50mum2 PIN diode combination is used in SPDT switch design to get high isolation for a phase array application. The switch achieves minimum isolation of 45 dB and maximum insertion loss of 0.64 dB over 10 GHz to 20 GHz covering X and Ku frequency bands

Authors

P. Sun, Le Wang, P. Upadhyaya

Journal

2005 IEEE Workshop on Microelectronics and Electron Devices, 2005. WMED '05.

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