Transferred-electron amplifiers (TEA) are finding applications where medium powers are required as driving stages. Most work has been done up to now under small-signal conditions. The present paper describes theoretical results of a large-signal analysis. From this analysis, it appears that different large-signal behaviors of TEA devices can be associated with their corresponding dc field distribution. We compare, by computer analysis, the evolution of the large signal impedance with the RF driving signal for different doping profiles (different stationary fields) and give design figures to increase the device added power.

Different large-signal behaviors of transferred-electron amplifiers can be associated with their corresponding dc field distribution, allowing for improved device design and increased power output.

On the large-signal behavior of transferred-electron amplifiers with a cathode notch

Key Takeaway: Different large-signal behaviors of transferred-electron amplifiers can be associated with their corresponding dc field distribution, allowing for improved device design and increased power output.