Abstract CdTe films were grown onto amorphous substrates by electron beam deposition (EB) and by horizontal and vertical physical vapor deposition (HPVD and VPVD). The films were characterized by X-ray diffraction, scanning electron microscopy (SEM) and by measuring their electrical resistivity and response to X-rays. A 4-μm-thick layer deposited by EB had uniform grain size, preferred growth orientation of (1 1 1). However, the films did not have any response to X-rays since the resistivity of the layer was only 104 Ω cm. The grain distribution, grain size and roughness of films grown by HPVD were nonuniform. VPVD gave uniform films 35 to 150 μm thick, grain size between 5 and 25 μm, preferred growth orientation of (1 1 1), resistivity of 106 Ω cm and linear response to X-rays. Correlations between texture and grain size with substrate temperature were established.

CdTe films grown by VPVD show uniform grain size, resistivity of 106  cm, and linear response to X-rays, making them suitable for X-ray digital imaging applications.

CdTe polycrystalline films for X-ray digital imaging applications

Key Takeaway: CdTe films grown by VPVD show uniform grain size, resistivity of 106 cm, and linear response to X-rays, making them suitable for X-ray digital imaging applications.