H. Zogg, K. Alchalabi, D. Zimin
Jun 1, 2002
Infrared Physics & Technology
Abstract The first monolithic 2D narrow gap infrared focal plane array on a Si-substrate, where the Si contains the active addressing electronics, has been realized. It consists of 96×128 photovoltaic Pb/PbTe sensors for the 3–5 μm range. The pixels are electronically addressed row-by-row and the columns are read-out in parallel. Pixel yield was up to above 98%, quantum efficiencies around 60%, and mean differential resistances 4 M Ω at 100 K. The noise current is correlated with the dislocation density in the epitaxial layer.