Abstract The first monolithic 2D narrow gap infrared focal plane array on a Si-substrate, where the Si contains the active addressing electronics, has been realized. It consists of 96×128 photovoltaic Pb/PbTe sensors for the 3–5 μm range. The pixels are electronically addressed row-by-row and the columns are read-out in parallel. Pixel yield was up to above 98%, quantum efficiencies around 60%, and mean differential resistances 4 M Ω at 100 K. The noise current is correlated with the dislocation density in the epitaxial layer.

This study demonstrates a 96x128 Pb/PbTe infrared focal plane array on a Si-substrate with high pixel yield, quantum efficiency, and low noise current, enabling efficient infrared detection in the 3-5 m range.

Lead chalcogenide on silicon infrared sensors: focal plane array with 96×128 pixels on active Si-chip

Key Takeaway: This study demonstrates a 96x128 Pb/PbTe infrared focal plane array on a Si-substrate with high pixel yield, quantum efficiency, and low noise current, enabling efficient infrared detection in the 3-5 m range.