Deep-level defects in InGaAsN grown by molecular-beam epitaxy
R. Kaplar, S. Ringel, S. Kurtz
Jun 17, 2002
Citations
37
Citations
Journal
Applied Physics Letters
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Key Takeaway Key Takeaway: Deep-level defects in InGaAsN grown by molecular-beam epitaxy include majority-carrier hole traps and shallow electron traps, with some attributed to intrinsic physical sources and others specific to the growth technique.
Abstract
Deep-level transient spectroscopy (DLTS) studies on both p-type unintentionally doped and n-type (Si-doped), 1.05 eV band gap InGaAsN grown by molecular-beam epitaxy are reported. Two majority-carrier hole traps were observed in p-type material, H3′ (0.38 eV) and H4′ (0.51 eV), and no evidence was found for the presence of minority-carrier electron traps. In n-type material, we observed a shallow distribution of electron levels, E1′, as well as a deep electron trap E4′ (0.56 eV) and a deep hole trap H5′ (0.71 eV). All DLTS peaks observed were broad and are thus consistent with continuous defect distributions and/or groups of closely spaced discrete energy levels in the band gap. Comparison of the spectra to previously reported spectra of metalorganic chemical vapor deposition-grown InGaAsN of the same composition revealed some similarities and some differences, suggesting that some of the observed deep levels are due to intrinsic physical sources, whereas others are specific to the growth technique used.