We report, for the first time, the direct write laser patterning of highly conductive Al from a liquid precursor, triisobutylaluminum (TIBA). Al wires were written on Si with a scanned Ar+ laser from liquid TIBA at speeds of up to several mm/s. Wires 3 μm wide by 1 μm high with a resistivity of 5.6 μΩ cm were routinely achievable.

Direct write laser patterning of highly conductive Al on Si at speeds up to several mm/s enables the production of 3m wide by 1m high wires with a resistivity of 5.6  cm.

Paper

High deposition rate laser direct writing of Al on Si

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