Design of 0.35 um CMOS Temperature Sensor for Automatic Refresh Cycle in DRAM Memory Cell
Sehyuk Ann, Junho Yu, Jusang Park
Oct 1, 2015
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2
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Journal
2015 IEEE European Modelling Symposium (EMS)
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Key Takeaway Key Takeaway: The proposed 0.35-m CMOS temperature sensor can achieve self-refresh operation in low power memory cells, with a power dissipation of 0.075 W per sample and a die-area of 0.06 mm2.
Abstract
This paper proposes a low power CMOS smart temperature sensor which is composed of temperature-to-pulse generator (TPG), time-to-digital converter (TDC), and frequency selector. The multiple-block system is to obtain the self-refresh operation for a low power memory cell. Temperature-to-pulse generator (TPG) is composed with two delay-lines which are obtained by the circuit of CMOS inverter. The propagation delay time of CMOS inverter has a dependency on temperature. The inverter-based delay line and feedback topology are applied in TDC. The small-size time-mode temperature sensor is designed with 0.35-μm CMOS process. Six different digital outputs are obtained for the temperature ranges of -40 ~ 100 °C. Simulation test shows that the proposed temperature sensor is operated with the low power dissipation of 0.075 μW per sample and die-area of 0.06 mm2.