The effect of dose rate and implant temperature on transient enhanced diffusion in boron implanted silicon
K. Jones, J. Chen, S. Bharatan
Nov 1, 1997
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5
Citations
Journal
Journal of Electronic Materials
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Key Takeaway Key Takeaway: Ion dose, not implant damage, determines the extent of transient enhanced diffusion in boron implanted silicon, with no measurable effect on dose rate or implant temperature below the amorphization threshold.
Abstract
The effect of ion implantation dose rate and implant temperature on the transient enhanced diffusion (TED) of low energy boron implants into silicon was investigated. The implant temperature was varied between 5 and 40°C. The beam current was varied from 0.035 to 0.35 mA/cm2. Three different defect regimes were investigated. The first regime was below the formation of any extended defects (5 keV B+ 2 × 1014/cm2) visible in the transmission electron microscope. The second regime was above the {311} formation threshold (2×1014/cm2) but below the subthreshold (type I) dislocation loop formation threshold. The final regime was above both the {311} and dislocation loop formation threshold (10 keV 5×1014/cm2). TED for these conditions is shown to be over after annealing at 750°C for 15–30 min. Secondary ion mass spectroscopy results for the three different damage regimes indicate that there is no measurable effect of dose rate or implant temperature on TED of boron implanted silicon for any of the damage regimes. It should be emphasized that the dose and energy of the boron implants is such that none of these implants approached the amorphization threshold. Above amorphization dose rate and implant temperature have dramatic effects on TED, but it appears that below the amorphization threshold there is little effect. These results suggest that for a given energy it is the ion dose not the extent of the implant damage that determines the extent of TED in boron implanted silicon.