Bulletin of Materials Science
Effects of thickness on the electronic structure of e-beam evaporated thin titanium films were studied using near-edge X-ray absorption fine structure (NEXAFS) technique at titanium L2,3 edge in total electron yield (TEY) mode and transmission yield mode. Thickness dependence of L2,3 branching ratio (BR) of titanium was investigated and it was found that BR below 3·5 nm shows a strong dependence on film thickness. Mean electron escape depth (λ) in titanium, an important parameter for surface applications, was determined to be λ = 2·6 ± 0·1 nm using L2,3 resonance intensity variation as a function of film thickness. The average L3/L2 white line intensity ratio of titanium was obtained as 0·89 from the ratio of amplitudes of each L3 and L2 peaks and 0·66 from the integrated area under each L3 and L2 peaks. In addition, a theoretical calculation for pure titanium was presented for comparison with experimental data.