M. Otsuki, S. Momota, M. Kirisawa
May 22, 2000
12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)
Experimental results of planer gate IGBTs fabricated with newly developed a non-self-align shallow p-well formation technique are presented. The 600 V/100 A NPT-IGBT shows the on-state voltage drop of about 1.7 V, which is more than 0.4 V reduction compared to the conventional devices. The average short circuit withstand capability of about 30 /spl mu/sec was obtained without external current limiting functions.