Triisobutylaluminum (TIBA) was used as an aluminum source for metalorganic molecular beam epitaxy (MOMBE). The optical absorption coefficient for TIBA was found to be larger than both tri ethyl aluminum and triethylgallium. TIBA was introduced into a laser-induced MOMBE system and selective deposition of Al and AlAs was carried out. Al metal was deposited on the area where the ArF excimer laser was irradiated and no deposition was observed without the excimer laser irradiation at a substrate temperature of 350 C. Furthermore, a laser large enhancement of the growth rate of AlAs was observed at 350 C.

Laser-induced molecular beam epitaxy can effectively deposit Al and AlAs metals, with potential for future applications in Gaalas epitaxial growth.

Paper

Excimer Laser Irradiation Effect on Metalorganic Molecular Beam Deposition of Al and Alas : Prospects for Laser-Assisted Epitaxial Growth of Gaalas

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