High TCR of VOx thin films fabricated by metal-organic decomposition for bolometer detectors

doi:10.1109/IRMMW-THZ.2012.6380256

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High TCR of VOx thin films fabricated by metal-organic decomposition for bolometer detectors

L. N. Son, T. Tachiki, T. Uchida

Dec 13, 2012

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Journal

2012 37th International Conference on Infrared, Millimeter, and Terahertz Waves

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Key Takeaway

Key Takeaway: VOx thin films fabricated by metal-organic decomposition show high temperature coefficient of resistance (TCR) for bolometer detectors, with a phase transition around 52°C and resistivity change of 3-4 orders.

Abstract

VOx thin films were fabricated on fused quartz substrates by metal-organic decomposition. In R-T characteristics, VOx films indicated an abrupt phase transition around 52°C with a resistivity change of 3-4 orders and temperature coefficient of resistance of 4.4-4.8 %/K at 300 K.

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