Analytic form of Thomas-Fermi-Dirac dielectric function for Si, Ge and diamond by variational method

doi:10.1007/BF01406582

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Analytic form of Thomas-Fermi-Dirac dielectric function for Si, Ge and diamond by variational method

D. Chandramohan, S. Balasubramanian

Jun 1, 1990

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Journal

Zeitschrift für Physik B Condensed Matter

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Key Takeaway

Key Takeaway: The variational method provides an approximate analytic form for the spatial dielectric function for positive and negative point charges in silicon, germanium, and diamond, compared to numerical results.

Abstract

The nonlinear Thomas-Fermi-Dirac equation is solved by a variational method for the positive and negative point charges in silicon, germanium and diamond. With the parameters determined, approximate analytic form is presented for the spatial dielectric function. Comparison with numerical result is indicated.

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