Monolithic GaAs ultra-wideband amplifier for pulse applications
F. Giannini, E. Limiti, G. Orengo
Sep 14, 1995
Citations
3
Citations
Journal
Electronics Letters
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Key Takeaway Key Takeaway: The novel pulse amplifier offers 18 dB gain and good phase linearity, with a new compensation technique achieving high frequency performance equalization.
Abstract
A novel pulse amplifier for digital and analogue communications from quasi-DC to 4.5 GHz is presented. Realised in GaAs MMIC MESFET technology with 0.5 µm gate length, the amplifier exhibits a measured gain of 18 dB, with good phase linearity. A new compensation technique has been successfully implemented to equalise the high frequency performance.
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