P. J. Deasley, S. Owen, P. Webb
Dec 1, 1970
Journal of Materials Science
Vacuum deposition of epitaxial films of zinc sulphide onto (111) 0.1Ω cm p type germanium substrates is described. The films contain stacking faults similar to those observed in epitaxial thin films of other substances and possess similar electrical characteristics to bulk crystals. Activation studies show that a.c. electroluminescence may be obtained by an embedding process. The zinc sulphide/germanium heterojunctions fabricated by the methods described are not efficient radiation detectors.