A high-performance current mirror using SOI gate controlled hybrid transistor (GCHT)
R. Huang, X. Zhang, Y.Y. Wang
Oct 5, 1998
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1998 IEEE International SOI Conference Proceedings (Cat No.98CH36199)
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Key Takeaway Key Takeaway: SOI gate controlled hybrid transistors (GCHTs) can enhance the performance of analog circuits while maintaining the advantages of SOI technology.
Abstract
One of the most important functional blocks in analog circuits is the current mirror, which is an essential component of bias circuits and differential amplifiers. Previously, the performance of current mirrors has been improved by adopting new circuit configurations or heightening the technological level. However, this may either increase the area due to the additional devices or make the technology more critical. The gate controlled hybrid transistor (GCHT) has been proposed recently (Vandebroek et al. IEEE Trans. Electron. Dev. vol. ED-38, p. 2487, 1991; Assaderaghi et al. IEEE Trans. Electron. Dev. vol. ED-41, p. 414, 1997; Huang et al, Solid State Electron. vol. 39, p. 1816, 1996) as a low power solution with some potential features, such as high current gain, high current driving capability, low switching-on voltage, small subthreshold swing, etc., which make it very promising for analog applications and low voltage applications. However, few results concerning the analog applications of GCHTs have been reported so far. This paper describes the fabrication of a high-performance current mirror using SOI GCHTs with conventional circuit configuration, investigates its characteristics in comparison with that using SOI MOSFETs, and discovers the potential of GCHTs in enhancing the performance of analog circuits while retaining the advantages of SOI technology.