Spatial correlation of traps and recombination centers may significantly change the kinetics of charge carriers' trapping in semiconductors and insulators. This phenomenon can be observed in thermally stimulated relaxation measurements, especially in the experiment of thermally stimulated conductivity (TSC). To study the kinetics we applied the Monte Carlo method. The calculations were performed for various spatial correlations and various retrapping coefficients r. The results for weakly correlated systems were compared to classical solutions obtained by solving the set of nonlinear equations by using the Gear method.

Spatial correlation of traps and recombination centers significantly changes the kinetics of charge carriers' trapping in semiconductors and insulators, as observed in thermally stimulated conductivity measurements.

Kinetics of trapping and recombination in spatially correlated systems: numerical studies for linearly varying temperature

Key Takeaway: Spatial correlation of traps and recombination centers significantly changes the kinetics of charge carriers' trapping in semiconductors and insulators, as observed in thermally stimulated conductivity measurements.