B. Luo, R. Mehandru, B. S. Kang
Feb 1, 2004
Abstract The rf performance of 1 × 200 μm2 AlGaN/GaN MOS-HEMTs with Sc2O3 used as both the gate dielectric and as a surface passivation layer is reported. A maximum fT of ∼11 GHz and fMAX of 19 GHz were obtained. The equivalent device parameters were extracted by fitting this data to obtain the transconductance, drain resistance, drain–source resistance, transfer time and gate–drain and gate–source capacitance as a function of gate voltage. The transfer time is in the order 0.5–1 ps and decreases with increasing gate voltage.