The authors have developed a substantially improved physically based model for boron implantation into single-crystal silicon based on the Monte Carlo code MARLOWE. This model accounts for all relevant implant parameters and incorporates a local electron concentration-dependent electronic stopping model and a cumulative damage model. Good agreement with experimental profiles is obtained not only as a function of energy but also as a function of tilt angle, rotation (twist) angle, and dose.<<ETX>>

This improved model for boron implantation into single-crystal silicon accurately simulates experimental profiles and accounts for relevant implant parameters, achieving good agreement with experimental profiles.

Monte Carlo simulation of ion implantation into single-crystal silicon including new models for electronic stopping and cumulative damage

Key Takeaway: This improved model for boron implantation into single-crystal silicon accurately simulates experimental profiles and accounts for relevant implant parameters, achieving good agreement with experimental profiles.