Thermally assisted recovery of low energy electron beam irradiation induced optical degradation of GaN
H. Nykänen, S. Suihkonen, M. Sopanen
Mar 1, 2013
Citations
4
Citations
Journal
Physica Status Solidi (c)
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Key Takeaway Key Takeaway: Low energy electron beam irradiation can partially recover GaN's photoluminescence intensity, with annealing at 500°C for 35 seconds-52 hours allowing partial recovery.
Abstract
In this paper, we present our studies on thermally assisted recovery of low energy electron beam induced optical degradation of gallium nitride. A clear reduction in MOVPE grown GaN band-to-band photoluminescence intensity induced by low energy electron beam irradiation has been found before. Partial recovery of the band-to-band emission was observed after annealing in both H2 and N2 ambient, at 500 °C for 35 sec-52 h. The photoluminescence intensity was reduced to approximately 15% by the low energy electron beam irradiation and recovered to maximum of 40% of the non-irradiated level. The recovery saturated after approximately 1 minute of annealing. Since hydrogen passivated Ga-vacancies have been shown to be activated by the electron beam treatment, a plausible recovery mechanism is suggested to involve re-passivation of these vacancies due to internal hydrogen diffusion in the sample (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)