High voltage GaN HEMT compact model: Experimental verification, field plate optimization and charge trapping
U. Radhakrishna, D. Piedra, Yuhao Zhang
Dec 1, 2013
Citations
27
Citations
Journal
2013 IEEE International Electron Devices Meeting
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Semantic Scholar
Key Takeaway Key Takeaway: The MIT Virtual Source GaNFET-High Voltage model accurately captures static and dynamic device behavior, enabling efficient device and circuit design for power conversion and switching applications.
Abstract
High voltage GaN HEMTs are leading contenders for power conversion and switching applications [1]. An accurate physics-based compact device model for this emerging technology is essential for device and circuit design. Several GaN HEMT compact models have been discussed but are not physics-based [2]-[3]. Here, a new physics-based compact model for HV-GaN HEMTs, the MIT Virtual Source GaNFET-High Voltage model (MVS-G-HV) is proposed. The model is geometry scalable and captures static and dynamic device behavior through self-consistent current and charge expressions. The access regions, which are important in device linearity [4] and reverse voltage blocking, are modeled as implicit-gated transistors. The model includes the effect of field plates and can be used to maximize the BV2 Gon figure-of-merit. In addition, `knee-walkout' in these devices is captured in the model through a simple trap-transistor model. The model requires a small number of parameters with straightforward physical meanings and is validated against DC-IV, S-parameter, breakdown and pulsed measurements of fabricated devices.