The Al2O3/LaAlO3/SiO2 gate dielectric for SiC power MOSFETs improves channel resistance and short-circuit withstand time, while maintaining the same on-resistance compared to SiO2 gate counterparts.

On-Resistance–Reliability Tradeoffs in Al₂O₃/LaAlO₃/SiO₂ Gate for SiC Power MOSFETs

The Al2O3/LaAlO3/SiO2 gate-stack for SiC power MOSFETs reduces channel resistance by 40% and improves threshold voltage stability compared to conventional SiO2 gate MOSFETs.

Static Performance and Threshold Voltage Stability Improvement of Al2O3/LaAlO3/SiO2 Gate-Stack for SiC Power MOSFETs

The 700°C-annealed LaAlO3 film shows promising dielectric properties and high breakdown effective electric field for SiC power MOS device applications.

Characterization of Al2O3/LaAlO3/SiO2 Gate Stack on 4H-SiC After Post-Deposition Annealing

Emerging gate dielectrics like Al2O3, HfO2, and HfSiON can improve SiC MOSFET performance by increasing breakdown voltage and decreasing gate-drain current while maintaining oxide thickness.

Comparison and analysis of gate dielectrics for SiC MOSFET

High-mobility normally off MOSFET devices can be achieved on 4H-SiC using atomic layer deposited Al2O3 gate dielectric, leading to higher-performance gate-controlled power devices.

High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic layer deposited Al2O3 gate dielectric

Hydrogen annealing improves mobility in 4H-SiC MOSFETs using aluminium oxide dielectric, reducing interface traps and improving device performance.

Increased Mobility in 4H-SiC MOSFETs by Means of Hydrogen Annealing

Al2O3 high-k gate dielectric significantly improves the electrical performance of a low-power 4H-SiC MOSFET, enhancing channel mobility, stability, and on-state resistance.

Analysis of Al2O3 high-k gate dielectric effect on the electrical characteristics of a 4H-SiC low-power MOSFET

High-k/4H-SiC interfaces with HfO2 improve transistor performance and reliability, while limiting gate leakage current in low power MOSFETs for applications like photovoltaic modules.

Analysis of 4H-SiC MOSFET with distinct high-k/4H-SiC interfaces under high temperature and carrier-trapping conditions

Advanced gate dielectric processes, such as nitridation and gate oxide doping, can improve channel mobility in 4H-SiC MOSFETs, but may compromise device stability.

Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review

High- SiC power MOSFETs with high dielectric constant outperform commercial ones in channel resistance and interface quality, offering a non-destructive characterization method for packaged power devices.

Small-Signal Impedance and Split C-V Characterization of High-κ SiC Power MOSFETs

Recent advances in dielectrics technology optimize SiC and GaN transistor performance, enhancing energy conversion efficiency in various applications.

Recent advances on dielectrics technology for SiC and GaN power devices

AlON high-k gate dielectric technology significantly improves performance and reliability in SiC power MOSFETs by optimizing the thickness ratio, nitrogen content, and nitrogen content in AlON film.

Performance and reliability improvement in SiC power MOSFETs by implementing AlON high-k gate dielectrics

A TiN/HfAlON gate stack improves reliability and enhances peak transconductance in SiC power MOSFETs, enabling up to 3.4 times higher peak transconductance with acceptable margins.

Comprehensive and systematic design of metal/high-k gate stack for high-performance and highly reliable SiC power MOSFET

SiC power devices face reliability challenges due to poor inversion channel mobility, material defects, and high temperature performance limitations.

Reliability and performance limitations in SiC power devices

High-K gate dielectrics significantly improve on-state performance and threshold voltage stability in SiC power MOSFETs, with shorter burn-in pulses compared to SiO2-based devices.

Latest Advances in the Implementation and Characterization of High-K Gate Dielectrics in SiC Power MOSFETs

The main cause of gate failure in SiC MOSFETs is a crack at the SiO2 dielectric layer with melted source aluminum inside, highlighting the vulnerability of the vertical power MOSFET structure in extremely high-temperature operation.

Gate Failure Physics of SiC MOSFETs Under Short-Circuit Stress

Surface nitridation and H2 annealing before deposited dielectric deposition significantly improves channel mobility in SiC MOSFETs, but reliability challenges remain.

(Invited, Digital Presentation) Interface Charge Trapping and Scattering in SiC MOSFET Channels

SiN-based gate dielectrics in SiC power MOSFETs show potential for improved on-state performance, but gate stress can impact threshold voltage shift and bias temperature instabilities.

Gate Stress Study on SiN-Based SiC Power MOSFETs

Al2O3 is the most used gate dielectric for -Ga2O3-based power electronics due to its large conduction band offset and potentially commensurate structure.

Band alignments of dielectrics on (− 201) β-Ga2O3

High-k SiC power MOSFETs show promising potential for low-loss switching and power conversion efficiency, but challenges in the SiC/dielectric interface hinder their full potential.

Study of 1.2kV High-k SiC Power MOSFETS Under Harsh Repetitive Switching Conditions

What are the advantages of Al2O3/LaAlO3/SiO2 gate dielectric for SiC power MOSFETs?

These studies suggest that the Al2O3/LaAlO3/SiO2 gate dielectric for SiC power MOSFETs improves channel resistance, threshold voltage stability, and short-circuit withstand time, while maintaining on-resistance and enhancing overall device performance.