What are the advantages of Al2O3/LaAlO3/SiO2 gate dielectric for SiC power MOSFETs?

Introduction

Silicon carbide (SiC) power MOSFETs are critical components in modern power electronics due to their high efficiency and robustness. The choice of gate dielectric material significantly impacts the performance and reliability of these devices. Recently, the Al2O3/LaAlO3/SiO2 gate dielectric stack has garnered attention for its potential advantages over traditional SiO2 gate dielectrics.

Key Insights

Improved Channel Resistance and Threshold Voltage Stability:
- The Al2O3/LaAlO3/SiO2 gate stack shows a 40% reduction in channel resistance compared to conventional SiO2 gate MOSFETs, along with superior threshold voltage stability .
Enhanced Mobility:
- Devices utilizing Al2O3 gate dielectrics exhibit higher field-effect mobility, with peak values reaching up to 106 cm²/V·s, which is significantly better than those with SiO2 gate dielectrics .
Longer Short-Circuit Withstand Time:
- The Al2O3/LaAlO3/SiO2 gate device has a short-circuit withstand time that is 1.55 times longer than that of the SiO2 gate device, indicating better reliability under high-stress conditions.
High Dielectric Constant and Reduced Leakage Current:
- High-k dielectrics like Al2O3 and LaAlO3 increase the breakdown voltage and decrease the gate-drain current, which is beneficial for maintaining device performance and reliability .
Predicted Lifetime:
- The predicted lifetime of the Al2O3/LaAlO3/SiO2 gate device is ten years at an effective electric field of 4.8 MV/cm, which is comparable to the latest SiO2 gate counterparts.

Conclusion

The Al2O3/LaAlO3/SiO2 gate dielectric stack offers several advantages for SiC power MOSFETs, including improved channel resistance, enhanced mobility, longer short-circuit withstand time, and better threshold voltage stability. These benefits make it a promising alternative to traditional SiO2 gate dielectrics, potentially leading to more reliable and efficient power devices.

Try another search

chain isomers belong to the same homologous series

recommender system

what competencies do local officials need to fulfill their duties?

Is Immune support supplements safe?

road networks are more easily integrated with other forms of transportation

What is the Protein folding in neurodegenerative diseases?

What are the advantages of Al2O3/LaAlO3/SiO2 gate dielectric for SiC power MOSFETs?

Summary

Introduction

Key Insights

Conclusion

Sources and full results

On-Resistance–Reliability Tradeoffs in Al₂O₃/LaAlO₃/SiO₂ Gate for SiC Power MOSFETs

The Al2O3/LaAlO3/SiO2 gate dielectric for SiC power MOSFETs improves channel resistance and short-circuit withstand time, while maintaining the same on-resistance compared to SiO2 gate counterparts.

High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic layer deposited Al2O3 gate dielectric

High-mobility normally off MOSFET devices can be achieved on 4H-SiC using atomic layer deposited Al2O3 gate dielectric, leading to higher-performance gate-controlled power devices.

Static Performance and Threshold Voltage Stability Improvement of Al2O3/LaAlO3/SiO2 Gate-Stack for SiC Power MOSFETs

The Al2O3/LaAlO3/SiO2 gate-stack for SiC power MOSFETs reduces channel resistance by 40% and improves threshold voltage stability compared to conventional SiO2 gate MOSFETs.

Comparison and analysis of gate dielectrics for SiC MOSFET

Emerging gate dielectrics like Al2O3, HfO2, and HfSiON can improve SiC MOSFET performance by increasing breakdown voltage and decreasing gate-drain current while maintaining oxide thickness.

Analysis of Al2O3 high-k gate dielectric effect on the electrical characteristics of a 4H-SiC low-power MOSFET

Al2O3 high-k gate dielectric significantly improves the electrical performance of a low-power 4H-SiC MOSFET, enhancing channel mobility, stability, and on-state resistance.

Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review

Advanced gate dielectric processes, such as nitridation and gate oxide doping, can improve channel mobility in 4H-SiC MOSFETs, but may compromise device stability.

High-mobility enhancement-mode 4H SiC lateral nMOSFETs with atomic layer deposited Al2O3 gate dielectric

Al2O3-deposited gate dielectric on SiC power devices can improve channel mobility and device performance in high-power applications.

Small-Signal Impedance and Split C-V Characterization of High-κ SiC Power MOSFETs

High- SiC power MOSFETs with high dielectric constant outperform commercial ones in channel resistance and interface quality, offering a non-destructive characterization method for packaged power devices.

Recent advances on dielectrics technology for SiC and GaN power devices

Recent advances in dielectrics technology optimize SiC and GaN transistor performance, enhancing energy conversion efficiency in various applications.

Performance and reliability improvement in SiC power MOSFETs by implementing AlON high-k gate dielectrics

AlON high-k gate dielectric technology significantly improves performance and reliability in SiC power MOSFETs by optimizing the thickness ratio, nitrogen content, and nitrogen content in AlON film.

Try another search