The development of indium gallium arsenide (Eg=0.75 eV) photovoltaic devices for thermophotovoltaic power generation is described. A device designed for broadband response had an air mass zero efficiency of 11.2 % and an internal quantum yield of over 90% in the range of 800 to 1500 nm. Devices designed for narrow‐band response have also been developed. Both structures are based on a n/p junction which also makes them applicable for integration into indium phosphide based, monolithic, tandem solar cells for solar photovoltaic applications.

Indium gallium arsenide photovoltaic devices show high efficiency and potential for integration into thermophotovoltaic power systems.

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High efficiency indium gallium arsenide photovoltaic devices for thermophotovoltaic power systems

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