Paper
1.54 μm electroluminescence from erbium (III) tris(8-hydroxyquinoline) (ErQ)-based organic light-emitting diodes
Published Sep 6, 1999 · R. Curry, W. Gillin
Applied Physics Letters
Q1 SJR score
160
Citations
0
Influential Citations
Abstract
Organic light-emitting diodes have been fabricated using erbium tris(8-hydroxyquinoline) as the emitting layer and N, N′-diphenyl-N,N′-bis(3-methylphenyl)-1,1′-biphenyl-4,4′-diamine as the hole-transporting layer. Room-temperature electroluminescence was observed at 1.54 μm due to intra-atomic transitions between the 4I13/2 and 4I15/2 levels in the Er3+ ion. These results suggest a possible route to producing a silicon-compatible 1.54 μm source technology.
Highly CitedStudy Snapshot
Erbium tris(8-hydroxyquinoline)-based organic light-emitting diodes show room-temperature electroluminescence at 1.54 m, suggesting a potential silicon-compatible 1.54 m source technology.
PopulationOlder adults (50-71 years)
Sample size24
MethodsObservational
OutcomesBody Mass Index projections
ResultsSocial networks mitigate obesity in older groups.
Full text analysis coming soon...
References
Erbium (III) tris(8-hydroxyquinoline) (ErQ): A potential material for silicon compatible 1.5 μm emitters
Erbium (III) tris(8-hydroxyquinoline) (ErQ) shows potential for inexpensive, 1.5 m emitters in organic electroluminescent diodes, offering a cheap alternative to silicon technology.
1999·121citations·W. Gillin et al.·Applied Physics Letters
Applied Physics Letters
Enhanced hole injection in a bilayer vacuum-deposited organic light-emitting device using a p-type doped silicon anode
Using p-type doped silicon as anode in organic light-emitting devices enhances hole injection compared to indium-tin-oxide (ITO) anodes, with surface band bending playing a key role in modifying interfacial barrier height.
1999·82citations·X. Zhou et al.·Applied Physics Letters
Applied Physics Letters
Erbium implanted thin film photonic materials
Erbium-doped thin film photonic materials show promise for integrated optoelectronic technology, with potential applications in optical amplifiers, lasers, and semiconductors.
1997·1020citations·A. Polman·Journal of Applied Physics
Journal of Applied Physics
Silicon compatible organic light emitting diode
Silicon-compatible organic light emitting diodes with high internal quantum efficiencies and low turn-on voltages have been successfully fabricated using a thin silicon dioxide layer.
1994·59citations·H. H. Kim et al.·Journal of Lightwave Technology
Journal of Lightwave Technology
Organic Electroluminescent Diodes
Organic electroluminescent diodes with high external quantum efficiency, luminous efficiency, and brightness can be achieved at low driving voltages.
1987·12223citations·C. Tang et al.·Applied Physics Letters
Applied Physics Letters
Citations
Low-temperature solvent-free synthesis route of blue and green luminescent phases of tris(8-hydroxyquinoline)aluminum (AlQ3)
This study developed a safe, eco-friendly, low-temperature method for synthesizing AlQ3 for blue and green luminescent organic light-emitting devices, challenging the belief that Fac-AlQ3 is only formed at high temperatures.
2024·0citations·K. Zerrouki et al.·Polyhedron
Polyhedron
Organic near-infrared optoelectronic materials and devices: an overview
Organic near-infrared optoelectronic materials and devices show great potential for military and civilian applications due to their invisibility to human eyes, deeper penetration into biological tissues, and low optical loss in optical fibers.
2024·2citations·Zong-Lu Che et al.·Advanced Photonics
Advanced Photonics
Structural, Physicochemical Characterization and Antimicrobial Activities of a new Tris(8-quinolinolato-κ2N,O)cobalt(III) Ethanol Solvate [Co(C9H6NO)3].(C2H6O)
The new 8-hydroxyquinoline cobalt(III) ethanol solvate exhibits high antibacterial and antifungal activities, with superior inhibitory effects against Klebsiella pneumoniae, Candida albicans, and Candida glabrata.
2023·0citations·Salsabil Idoudi et al.·Journal of Molecular Structure
Journal of Molecular Structure
Luminescence switch based on the acid/base induced reversibility of covalent bonds in lanthanide(III) complexes.
Tb(III) luminescence switching can be achieved using reversible covalent bonds in lanthanide(III) complexes, enabling on-off regulation of luminescence through acid/base-driven exchange.
2021·0citations·C. Kachi‐Terajima et al.·Chemical communications
Chemical communications
Recent Progress in Emerging Near-Infrared Emitting Materials for Light-Emitting Diode Applications
Emerging NIR-emitting materials, such as organic, inorganic quantum dot, and organic-inorganic hybrid perovskite, show promise for future LED applications in night vision, security, medicine, and military applications.
2020·19citations·Yingqi Zheng et al.·Organic Materials
Organic Materials
Insights into energy transfer pathways between the exciplex host and fluorescent guest: attaining highly efficient 710 nm electroluminescence
NOz-t-TPA-doped OLEDs show a 6.6% external quantum efficiency at 710 nm, with improved energy transfer pathways between the exciplex host and fluorescent guest.
2020·9citations·Chun-Ying Huang et al.·Journal of Materials Chemistry C
Journal of Materials Chemistry C
Molecularly engineered electroplex emission for an efficient near-infrared light-emitting electrochemical cell (NIR-LEC)
A new blend of ruthenium polypyridyl complexes enables near-infrared emission in light-emitting electrochemical cells, with potential applications in microcontact or inkjet printing.
2020·2citations·H. Shahroosvand et al.·RSC Advances
RSC Advances