Indium arsenide: a semiconductor for high speed and electro-optical devices

doi:10.1016/0921-5107(93)90140-I

Paper

DOI: 10.1016/0921-5107(93)90140-I

Indium arsenide: a semiconductor for high speed and electro-optical devices

Published Apr 15, 1993 · A. Milnes, A.Y Polyakov

Materials Science and Engineering B-advanced Functional Solid-state Materials

UNKNOWN SJR score

Citations

Influential Citations

Full textSemantic Scholar

Abstract

Abstract hidden due to publisher request; this does not indicate any issues with the research. Click the full text link above to read the abstract and view the original source.

Highly Cited

Study Snapshot

Indium arsenide is a promising semiconductor for high-speed and electro-optical devices, with promising potential for field effect transistors and modulated doped field effect transistors.

PopulationOlder adults (50-71 years)

Sample size24

MethodsObservational

OutcomesBody Mass Index projections

ResultsSocial networks mitigate obesity in older groups.

Sign up to use Study Snapshot

Consensus is limited without an account. Create an account or sign in to get more searches and use the Study Snapshot.

Create an account

Full text analysis coming soon...

References

DOI: 10.1063/1.107630

High‐power multiple‐quantum‐well GaInAsSb/AlGaAsSb diode lasers emitting at 2.1 μm with low threshold current density

Multiple-quantum-well GaInAsSb/AlGaAsSb diode lasers with low threshold current density and high differential quantum efficiency have been demonstrated, offering a dramatic improvement in performance over double-heterostructure devices.

1992·136citations·H. Choi et al.·Applied Physics Letters

Applied Physics Letters

DOI: 10.1063/1.107189

Surface donor contribution to electron sheet concentrations in not‐intentionally doped InAs‐AlSb quantum wells

Surface donors contribute to high carrier concentrations in not-intentionally doped InAs/AlSb quantum wells, with the Fermi level pinned at the surface, 850-50 meV below the conduction band edge of the AlSb top layer.

1992·75citations·C. Nguyen et al.·Applied Physics Letters

Applied Physics Letters

DOI: 10.1063/1.350174

Raman scattering study of InAs/GaInSb strained layer superlattices

The InAs/GaInSb superlattice shows promise as a long-wavelength infrared detector material due to its single peak Raman scattering spectra and low dislocation density.

1991·15citations·I. Sela et al.·Journal of Applied Physics

Journal of Applied Physics

DOI: 10.1063/1.105283

Effect of growth temperature on photoluminescence of InAs grown by organometallic vapor phase epitaxy

The photoluminescence intensity of InAs grown by OMVPE decreases by two orders of magnitude as growth temperature decreases, attributed to increased carbon concentration.

1991·59citations·Z. Fang et al.·Applied Physics Letters

Applied Physics Letters

DOI: 10.1063/1.105544

Room‐temperature cw operation at 2.2 μm of GaInAsSb/AlGaAsSb diode lasers grown by molecular beam epitaxy

GaInAsSb/AlGaAsSb diode lasers grown by molecular beam epitaxy can be operated at room-temperature at 2.2 m, with maximum output powers of 10.5 and 4.6 mW/facet, respectively.

1991·63citations·H. Choi et al.·Applied Physics Letters

Applied Physics Letters

Citations

DOI: 10.1002/aoc.7985

Evaluating Electronic Properties of Self‐Assembled Inner Hollow (InAs)12n (n = 1–16) Nanomaterials With High Solar Light‐to‐Electricity Efficiencies Using First Principle Modeling

Large-sized porous (InAs)12n nanosheets and nanowires with ultrahigh specific capacitance trap solar light energies and high light-to-electricity conversion efficiencies, making them favorable for optoelectronic and energy miniaturized devices.

2025·0citations·Run‐Ning Zhao et al.·Applied Organometallic Chemistry

Applied Organometallic Chemistry

DOI: 10.1016/j.jcrysgro.2024.127989

High-quality InAs homoepitaxial layers grown by molecular beam epitaxy

Lower growth temperature, reduced As2 flux, and slower growth rate are crucial for achieving high-quality InAs homoepitaxial layers by molecular beam epitaxy.

2024·0citations·Hao Zhou et al.·Journal of Crystal Growth

Journal of Crystal Growth

DOI: 10.3390/nano13243083

Growth and Characterization of Carbon Nanofibers Grown on Vertically Aligned InAs Nanowires via Chemical Vapour Deposition

Carbon nanofibers can be controlled and integrated with InAs nanowires for energy-efficient integrated circuits, with potential applications in energy-efficient integrated circuits.

2023·1citation·Muhammad Arshad et al.·Nanomaterials

Nanomaterials

DOI: 10.1016/j.mssp.2023.107770

Evaluation of polishing induced subsurface damage in InAs substrates by an acid solution etching method

Subsurface damage exists in polished InAs substrates, as revealed by the changes in morphology of shallow pits caused by preferential corrosion.

2023·5citations·Yinhong Feng et al.·Materials Science in Semiconductor Processing

Materials Science in Semiconductor Processing

DOI: 10.3390/ma16072859

Semiconductor Characterization by Terahertz Excitation Spectroscopy

THz excitation spectroscopy (TES) is a contactless method for studying the band structure and ultrafast processes of various technologically important materials, including GaAs, InAs, InGaAs, and GaAs nanowires.

2023·5citations·A. Krotkus et al.·Materials

Materials