Pyrolytic laser assisted chemical vapor deposition of Al from dimethylethylamine‐alane: Characterization and a new two‐step writing process

doi:10.1063/1.111119

Paper

Pyrolytic laser assisted chemical vapor deposition of Al from dimethylethylamine‐alane: Characterization and a new two‐step writing process

Published Jan 24, 1994 · Jaesung Han, K. Jensen, Y. Senzaki

Applied Physics Letters

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16

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Abstract

We describe pyrolytic laser assisted chemical vapor deposition of Al from dimethylethylamine‐alane with 514‐nm radiation from an Ar ion laser. High purity Al lines with resistivity close to bulk Al are reported for a range of operating conditions. The relationship between operating parameters and materials properties of the deposited lines is delineated. Results from deposition on different substrates, Pt, Au, W, and Si, provide insight into thermal and nucleation effects in the laser writing process. Based on the observed nucleation behavior, we demonstrate a two‐step fast writing process involving fast laser nucleation of lines, followed by selective chemical vapor deposition of Al on the nucleated pattern.

Study Snapshot

Pyrolytic laser assisted chemical vapor deposition of Al from dimethylethylamine-alane produces high purity Al lines with resistivity close to bulk Al, offering a two-step fast writing process for various substrates.

PopulationOlder adults (50-71 years)

Sample size24

MethodsObservational

OutcomesBody Mass Index projections

ResultsSocial networks mitigate obesity in older groups.

Paper

Pyrolytic laser assisted chemical vapor deposition of Al from dimethylethylamine‐alane: Characterization and a new two‐step writing process

References

Argon-ion laser direct-write Al deposition from trialkylamine alane precursors

Laser direct writing of aluminum lines on Si, GaAs, and Al_2O_3 substrates using trialkylamine alane precursors produces uniform, polycrystalline lines with resistivities down to 4.5 cm.

Liquid precursor two‐step aluminum thin‐film deposition on KrF‐laser patterned palladium

This two-step process allows for selective, high-quality aluminum thin-film deposition on KrF-laser patterned palladium catalysts, with a deposition rate of t10 s in an inert gas atmosphere.

Aluminum thin film growth by the thermal decomposition of triethylamine alane

Thermal decomposition of triethylamine alane on an Al(111) surface produces pure aluminum thin films, with growth rate limited by hydrogen recombination.

The adsorption and thermal decomposition of trimethylamine alane on aluminum and silicon single crystal surfaces: kinetic and mechanistic studies

Thermal decomposition of trimethylamine alane on aluminum and silicon single crystal surfaces produces elementally pure aluminum thin films and gas phase hydrogen and trimethylamine, with potential for epitaxial growth on aluminum and polycrystalline growth on Si(111).

The chemistry of alkyl-aluminum compounds during laser-assisted chemical vapor deposition

Laser photolysis of alkyl-aluminum compounds can deposit Al thin films, but pyrolysis is more effective due to the weakly bound metastable state and surface selectivity.

Citations

Investigation of reaction mechanisms in the chemical vapor deposition of al from DMEAA

This novel reaction scheme for chemical vapor deposition of Al films on substrates from DMEAA effectively captures the abrupt decrease in deposition rate at temperatures above 200°C due to gas phase consumption and increased desorption rate from the film surface.

Multiscale modeling and experimental analysis of chemical vapor deposited aluminum films: Linking reactor operating conditions with roughness evolution

This study successfully models surface roughness in chemical vapor deposition of aluminum films, linking operating conditions to final film properties, enabling better control of film properties.

Ballistic and molecular dynamics simulations of aluminum deposition in micro-trenches

Aluminum deposition in micro-trenches can be accurately predicted using both ballistic and molecular dynamics simulations, with the effective sticking coefficient of DMEAA being in the range of 0.1-1.

Reaction and Transport Interplay in Al MOCVD Investigated Through Experiments and Computational Fluid Dynamic Analysis

The improved reactive transport model for Al MOCVD enables better understanding and prediction of growth rates, potentially enhancing growth rate and spatial uniformity.

Laser chemical vapour deposition: materials, modelling, and process control

Laser chemical vapour deposition (LCVD) offers potential for producing small and complex metal and ceramic parts, with potential applications in mechanical, electrical, and optical industries.