Atomic Layer Deposition of Ruthenium Using the Novel Precursor bis(2,6,6-trimethyl-cyclohexadienyl)ruthenium

doi:10.1021/CM2004825

Paper

Atomic Layer Deposition of Ruthenium Using the Novel Precursor bis(2,6,6-trimethyl-cyclohexadienyl)ruthenium

Published Apr 27, 2011 · K. Gregorczyk, L. Henn-Lecordier, J. Gatineau

Chemistry of Materials

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48

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Abstract

A recently reported ruthenium molecule, bis(2,6,6-trimethyl-cyclohexadienyl)ruthenium, has been developed and characterized as a precursor for atomic layer deposition (ALD) of ruthenium. This molecule, which has never been reported as an ALD precursor, was developed to address low growth rates, high nucleation barriers, and undesirable precursor phases commonly associated with other Ru precursors such as RuCp and Ru(EtCp)2. The newly developed precursor has similar vapor pressure to both RuCp and Ru(EtCp)2 but offers significant improvement in stability as evaluated by thermogravimetric analysis and differential scanning calorimetry. In an ALD process, it provides good self-limiting growth, with a 0.5 A/cycle growth rate under saturated dose conditions in a temperature between 250 and 300 °C. Furthermore, the precursor exhibits considerably better nucleation characteristics on SiO2, TiO2, and H-terminated Si surfaces, compared to RuCp2 and Ru(EtCp)2.

Study Snapshot

The novel ruthenium precursor bis(2,6,6-trimethyl-cyclohexadienyl)ruthenium offers improved stability, growth rate, and nucleation characteristics for atomic layer deposition, offering potential for future applications.

PopulationOlder adults (50-71 years)

Sample size24

MethodsObservational

OutcomesBody Mass Index projections

ResultsSocial networks mitigate obesity in older groups.

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Atomic Layer Deposition of Ruthenium Using the Novel Precursor bis(2,6,6-trimethyl-cyclohexadienyl)ruthenium

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References

Low Temperature Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and O2

Low-temperature atomic layer deposition of ruthenium thin films using isopropylmethylbenzene-cyclohexadiene-ruthenium and oxygen can produce continuous films with high coverage and aspect ratios.

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Atomic layer deposition can create nanocapacitor arrays in anodic aluminium oxide nanopores, offering high energy density and power density for next-generation energy systems.

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Nucleation of Ru on silicon oxide and silicon nitride substrates by atomic layer deposition varies depending on the substrate, with enhanced nucleation on nitride substrates.

Al‐Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors

Al-doped TiO2 films with ultralow leakage currents are promising for next-generation DRAM capacitors, ensuring efficient memory operation and longer refresh times.

Citations

Area-Selective Atomic Layer Deposition of Ru Using Carbonyl-Based Precursor and Oxygen Co-Reactant: Understanding Defect Formation Mechanisms

This study demonstrates area selective deposition of Ru films on TiN using carbonyl-based precursor and oxygen co-reactant, reducing defect formation and improving process selectivity.

The surface chemistry of the atomic layer deposition of metal thin films

Atomic layer deposition (ALD) of metal films offers unique surface chemistry and unique challenges, requiring careful selection of co-reactants and substrate for optimal film growth and properties.

Growth behavior and mechanism of atomic layer deposition of Ru for replacing Cu-interconnects

This study demonstrates a simple plasma-free technique for constructing high-quality Ru films with extremely low resistivity and low impurities, making them ideal candidates for replacing Cu in ultrafine-pitch interconnects.

Role of dose optimization in Ru atomic layer deposition for low resistivity films

Dose optimization beyond the ALD saturation point is crucial for developing a selective and low resistivity Ru atomic layer deposition process for sub 20 nm interconnect layers.

Improved Properties of the Atomic Layer Deposited Ru Electrode for Dynamic Random-Access Memory Capacitor Using Discrete Feeding Method.

Using the discrete feeding method (DFM) in atomic layer deposition improves surface morphology and crystallinity of RuO2 films, leading to better performance in DRAM capacitors.