F. Zang, Z. Hong, Wuxia Li
Apr 1, 2004
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0
Influential Citations
65
Citations
Journal
Applied Physics Letters
Abstract
Near-infrared (NIR) electroluminescence (EL) devices have been fabricated employing thulium complexes as emitting materials. The EL emissions at 1.4 and 0.8 μm were observed from the devices of tris-(dibenzoylmethanato)-mono-(bathophenanthroline or 1,10-phenonthroline) thulium [Tm(DBM)3bath or Tm(DBM)3phen] at room temperature and assigned to 3F4–3H4 and 3F4–3H6 transitions of Tm3+ ions, respectively. By comparison with the NIR emissions of four Tm complexes with different ligands, it was found that the first ligand played a more important role for the Tm3+ ion emissions rather than the second one. In order to meet the requirement of optical communication, both Tm(DBM)3bath and erbium [Er] (DBM)3bath were incorporated into EL devices so that a broadened EL emission band ranging from 1.4 to 1.6 μm was obtained, showing the potential application of Tm complexes for optical communication systems.