Low temperature direct bonding mechanisms of tetraethyl orthosilicate based silicon oxide films deposited by plasma enhanced chemical vapor deposition

doi:10.1063/1.4752258

Paper

Low temperature direct bonding mechanisms of tetraethyl orthosilicate based silicon oxide films deposited by plasma enhanced chemical vapor deposition

Published Sep 17, 2012 · C. Sabbione, L. Cioccio, L. Vandroux

Journal of Applied Physics

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24

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2

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Abstract

Bonding behaviour and surface adhesion mechanisms of tetraethyl orthosilicate silicon oxide films are investigated. Prior to the bonding, infrared absorption spectroscopy was used to assess chemical composition of the bonding layers. The incorporation of −OH groups during the deposition process and the moisture absorption is shown and a specific effect of the applied RF power is highlighted. A strong correlation is found between trapped species and the evolution of the bonded layers during subsequent thermal annealing. The first observed phenomenon is an overall hardness reduction of the film deposited at low RF power which results in an increase of local adhesion area, hence an enhancement of the bonding energy. In the meantime, in this configuration water production is promoted in the volume of the film through silanol condensation and silicon oxidation occurs at the interface between the bonding layer and the silicon bulk. As a by-product of this reaction, hydrogen is released and it migrates towards t...

Study Snapshot

Low RF power deposition of tetraethyl orthosilicate silicon oxide films leads to increased local adhesion area and enhanced bonding energy, while water production and silicon oxidation promote water migration and bonding.

PopulationOlder adults (50-71 years)

Sample size24

MethodsObservational

OutcomesBody Mass Index projections

ResultsSocial networks mitigate obesity in older groups.

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Low temperature direct bonding mechanisms of tetraethyl orthosilicate based silicon oxide films deposited by plasma enhanced chemical vapor deposition

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Citations

Environmental Moisture Absorption by Oxide-Coated SI Wafers and Effects on Post-Bonding Void Formation and Bond Quality

Long storage time of oxide-coated silicon wafers negatively impacts bonding quality, with moisture absorption from the environment playing a role.

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