Saleem I. Qashou, Mohamed M. Rashad, Mohamed M. Rashad
Jun 5, 2017
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0
Influential Citations
40
Citations
Journal
Optical and Quantum Electronics
Abstract
Thin films of 2,9-Bis [2-(4-chlorophenyl)ethyl] anthrax [2,1,9-def:6,5,10-d′e′f′] diisoquinoline-1,3,8,10 (2H,9H) tetrone (Ch-diisoQ) were prepared by thermal evaporation technique. Structural properties of these (as-prepared and annealed at 373, 423, 473 and 523 K) films were determined by X-ray diffraction and scanning electron microscopy, which showed that the grain sizes increasing by the annealing effect. The transmittance and reflectance of all Ch-diisoQ thin films were measured in the range 200–2500 nm. Some optical constants such as optical band gap (Eg), dispersion energy (Ed), single oscillator energy (Eo) and optical dielectric constant at a higher frequency (ε∞) were calculated at different annealing temperatures. The optical band gap of the samples is decreased with the increase of annealing temperatures due to the increasing of the π-dislocation. Finally, the values of the optical susceptibility, χ(3), were found to be annealing dependence.