S. Veintemillas-Verdaguer, A. Figueras, R. Rodríguez-Clemente
Mar 1, 1993
Citations
0
Influential Citations
17
Citations
Journal
Journal of Crystal Growth
Abstract
Tetramethylsilane is an organometallic precursor commonly used in the preparation of SiC layers by MOCVD. However, little is known about the chemical reactions involved in the deposition process. Thermal decomposition of TMS in the presence of H 2 used as carrier gas, has been thermodynamically modelled considering the byproducts detected in the exhaust gas and some others that theoretically could be present: C, Si, H 2 , mononuclear silanes and mononuclear methylsilanes, methane, ethane, ethene, acetylene and SiC vapour