A. Ougazzaden, Jayatirtha N. Holavanahalli, M. Geva
Dec 1, 2000
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Journal
Journal of Crystal Growth
Abstract
Abstract Carbon doping in InAlAs material grown with LP-MOVPE has been studied. Carbon tetrabromide (CBr 4 ) has been used as a source of carbon. We investigated the influence of the growth parameter on the carbon incorporation. Carbon concentrations as high as 3×10 19 cm −3 were achieved at the low temperature of 530°C and the low V/III ratio of 20. Post-thermal annealing was required to activate carbon atoms. Hole concentrations as high as 1.8×10 19 cm −3 have been obtained.