Yi-Lung Cheng, Yixue Lu, Tai-Jung Chiu
May 1, 2011
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0
Influential Citations
2
Citations
Journal
Advanced Materials Research
Abstract
Two kinds of organosilicate precursors, trimethylsilane (3MS) and diethoxymethylsilane (DEMS), were used to produce low-k films by plasma-enhanced chemical vapor deposition (PECVD) in this work. The experimental results indicate that DEMS-based low-k films have superior electrical performance and better thermal stability as compared to 3MS-based low-k films. Therefore, DEMS-based films are the promising low-k materials which can be integrated in very large scale integration circuit as an inter-layer dielectric material.