M. Nakayama, Seiji Miyamoto, Takuro Ogawa
Jul 1, 2014
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Journal
Materials Science in Semiconductor Processing
Abstract
Abstract Pyrolysis of tetrabromosilane (SiBr 4 ) was carried out by passing vaporized SiBr 4 with hydrogen over a substrate heated to less than 1000 °C. The substrate was then placed in a reaction furnace equipped with a flow system and the exhaust gas containing the reactants and products was analyzed versus temperature. SiBr 4 began to decompose at 800 °C simultaneously with the evolution of tribromosilane (SiHBr 3 ), which was followed by the deposition of silicon in a crystalline form. The conversion of SiBr 4 increased with increasing reaction temperature. No reaction occurred in the absence of H 2 . An experiment with tetrachlorosilane (SiCl 4 ) under the similar conditions led to a decrease in SiCl 4 concentration at temperatures greater than 900 °C. This demonstrates that decomposition of SiBr 4 is energetically favorable compared to that of SiCl 4 , as predicted from the Ellingham diagrams for the reactions of Br- and Cl-containing species. Thus, Si production from bromosilanes is an alternative to the process using SiHCl 3 , the so-called Siemens method, which is the main technology for Si production currently.