Liang Jiang, Liang Jiang, Yongyong He
Jun 25, 2014
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Influential Citations
70
Citations
Quality indicators
Journal
Microelectronic Engineering
Abstract
Abstract Cobalt has been selected as one of the most promising candidates of barrier metals for the next-generation ultra-large scale integrated circuits. This paper investigated the synergetic effect of oxidizer like H 2 O 2 and complexing agent like glycine on the cobalt polishing performance. It is revealed that the cobalt static etching rate (SER) and removal rate (RR) are gradually suppressed with increasing pH due to the formation of compact and passive cobalt oxides on the cobalt surface, and the addition of high concentration of H 2 O 2 can further reduce the cobalt RR. However, by the synergetic effect of H 2 O 2 and glycine at pH 8.00, the cobalt SER and RR can be enhanced due to the formation of soluble Co(III)-glycine complex.