A. Voitsekhovskii, D. Gorn, S. Nesmelov
Sep 1, 2010
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Influential Citations
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Journal
Opto-Electronics Review
Abstract
The purpose of this scientific work is the research of energy-band diagrams and capacity-voltage characteristics of CdxHg1−xTe-based variband heteroepitaxial structures with taking into account the dependence of electron affinity on the composition.Numerical simulations of energy-band diagrams and capacity-voltage characteristics for metal-insulator-semiconductor structures based on CdxHg1−xTe-variable composition layers are carried out in this work. Energy diagrams are calculated with taking into account the dependence of electron affinity on the composition x of CdxHg1−xTe. This dependence was obtained in terms of dependence of the local electroneutrality level on the composition for CdxHg1−xTe.