K. Shibata, Y. Kubozono, T. Kanbara
Apr 1, 2004
Citations
0
Influential Citations
42
Citations
Journal
Applied Physics Letters
Abstract
Fullerene field-effect transistors (FETs) were fabricated with thin films of C84, which showed n-channel normally-on depletion-type FET characteristics. The C84 FET device exhibited the highest mobility, μ, of 2.1×10−3 cm2 V−1 s−1 among normally-on fullerene FETs. The carrier transport of this FET device can be interpreted as thermally activated hopping transport. Carrier type (n-channel) and transport mechanism (hopping) reflect the electronic properties of the C84 molecule.