M. Singh, Yi Yang, C. Takoudis
May 1, 2009
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Journal
Electrochemical and Solid State Letters
Abstract
We report the first use of a room-temperature liquid iron precursor, n-butylferrocene, to deposit polycrystalline BiFeO 3 films by metallorganic chemical vapor deposition. From X-ray photoelectron spectroscopy, the Bi/Fe atomic ratio is observed to be ∼ 1. 1. Electrical measurements show that the films exhibit ferroelectric characteristics at room temperature with negligible charge leakage. Magnetic measurements reveal a room-temperature saturation magnetization of ∼8 emu/cm 3 and provide evidence for a possible spin reorientation transition near 140 K. Data on magnetic-field dependence of dielectric constant at 18 GHz provide evidence for magnetic-ferroelectric coupling in the film, indicating potential for application in high-frequency tunable devices.