L. Vincent, L. Thomé, F. Garrido
Dec 4, 2008
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24
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Journal
Journal of Applied Physics
Abstract
The aim of this study was to identify experimentally the phase which includes cesium in yttria stabilized zirconia (YSZ). The solubility and retention of cesium in YSZ were studied at high temperature (HT). Cesium was ion implanted (at 300 keV) into YSZ at room temperature (RT), 750 °C, or 900 °C at fluences up to 5×1016 cm−2. The temperature dependence of the radiation-induced damage and of the cesium distribution in YSZ single crystals was investigated by Rutherford backscattering spectrometry and ion channeling. Transmission electron microscopy (TEM) studies were performed in order to determine the damage nature and search for a predicted ternary phase of cesium zirconate. Whatever the implantation temperature, the thickness of the damaged layer increases inwards with ion fluence. At RT, amorphization occurs, caused by the high Cs concentration (7at.%). In situ TEM during postannealing shows recrystallization of cubic zirconia after release of cesium. A high implantation temperature has a significant i...