D. Georgiev, J. P. Moening, Sandeepkumar Naleshwar
Jun 2, 2009
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Journal
2009 IEEE Nanotechnology Materials and Devices Conference
Abstract
Results from an initial study on the preparation, microstructure, and optical and electrical properties of zinc nitride films are presented. Zinc nitride has a lower bandgap than ZnO and can be fabricated in a thin film form by sputtering and other methods. This material has a potential as a new semiconductor material in photovoltaic, optoelectronic and other applications, offering additional advantages such as environment-friendly processing and potentially low fabrication cost. A main goal of our studies, which are still in progress, is establishing correlations between the fabrication conditions and the structure and relevant properties. Junctions and interfaces with metals or zinc oxide will be of interest as well.