Masao Kondo, Chikashi Anayama, Toshiyuki Tanahashi
1992
Citations
0
Influential Citations
47
Citations
Journal
Journal of Crystal Growth
Abstract
Abstract We investigated the crystal orientation dependence of impurity dopant incorporation in III–V compound semiconductors grown be metalorganic vapor phase epitaxy (MOVPE). Doping experiments were performed for group-II acceptors (Zn and Mg), a group-VI donor (Se), and a group-IV donor (Si from silane or disilane) into MOVPE-grown GaAs, Ga 0.5 In 0.5 P, and (Al 0.7 Ga 0.3 ) 0.5 In 0.5 P. The doping efficiency for each impurity was studied between (100) and (111)A/B faces. Comparing our results to previous reports, we found that there is a general rule in the orientation dependence of impurity incorporation, according to dopant groups. The group-II acceptors (Cd, Mg, and Zn), which reside on the group-III sublattice, are preferentially incorporated on the ( h 11)A face ( h ≥ 1) and, in many cases, incorporated less on the ( h 11)B face ( h ≥ 1) than on the (100) face. I n all materials, the Zn incorporation is most prominent on the (311)A face. In contrast, the group-VI donors, which reside on the group-V sublattice, are preferentially incorporated on the ( h 11)B face ( h ≥ 1) and incorporated less on the ( h 11)A face ( h ≥ 1) th an on the (100) face. Comparing to group-II and group-VI impurities, Si generally exhibits weak dependences. Based on rate limiting processes for the dopant incorporation, we constructed a model for the orientation dependence for the group-II and group-VI impurities, considering atomic bonding geometries between adsorbed impurity atoms and adsorption sites.