K. Hara, K. Sayama, H. Arakawa
Mar 15, 2000
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0
Influential Citations
6
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Journal
Bulletin of the Chemical Society of Japan
Abstract
3-Thiopheneacetic acid (3TA) was electrochemically oxidized and polymerized on indium tin oxide (ITO) electrodes in a 0.05 mol dm-3 tetrabutylammonium perchlorate (TBAP) acetonitrile solution; also, the photoelectrochemical properties of the resulting poly(3-thiopheneacetic acid) (P3TA) were studied. The film showed n-type semiconductor properties, although anion-doped conducting polymer prepared by electrochemical oxidation is generally of the p-type. An anodic photocurrent due to oxygen evolution from water was observed under white-light irradiation in a 0.1 mol dm-3 Na2SO4 aqueous solution. The anodic photocurrent density at 1.9 V vs. Ag/AgCl was 1.1 mA cm-2 and the flat-band potential of P3TA, estimated from the onset of an anodic photocurrent, was -0.1 V vs. Ag/AgCl. The band gap of P3TA was 2.4 eV, obtained from an hν vs. (hν PC)1/2 plot.