E. Roberts
Dec 1, 1973
Citations
0
Influential Citations
24
Citations
Journal
Journal of The Electrochemical Society
Abstract
The preparation of polymethylcyclosiloxane (PMCS) is described. PMCS may be used as a resist in which siliceous film patterns may be formed by irradiation with an electron beam. These siliceous patterns are readily developed and may be used directly in semiconductor technology as diffusion barriers or as etch-resistant layers, and after suitable heat treatment they may be used also as passivating layers. Transistors were made using PMCS film patterns defined by electron beams as diffusion barriers and as passivating layers. The sensitivity of PMCS to irradiation may be increased by controlled condensation to give a higher molecular weight polymer, or by introducing vinyl groups to replace some of the methyl groups in the polymer. The chemical changes which occur in PMCS upon irradiation by electrons were investigated and it is shown that at doses normally used in making film patterns of use in semiconductor technology, crosslinking occurs mainly through the hydroxyl groups present in the polymer. Subsequent treatment (thermal or radiation) can eliminate organic residues to produce a film which is identical to thermally grown silica.