J. Nishino, S. Ohshio, K. Kamata
1994
Citations
0
Influential Citations
5
Citations
Journal
MRS Proceedings
Abstract
ZnO and Al-doped ZnO films prepared using a low-pressure chemical vapor deposition (LP-CVD) method were studied. The films were prepared on fused quartz substrates using bis(2,4-pentanedionato)zinc and tris(2,4-pentanedionato)aluminum which are inexpensive and stable source materials. The highly c-axis oriented ZnO films were grown on the substrates above 500°C. The minimum electrical resistivity of ρ=6.5×10 −5 Ωm was obtained for the ZnO film, and of ρ = 3.5×10 −5 Ωm was obtained for the ZnO:Al film.