J. C. Garcia, A. Beye, J. Contour
May 9, 1988
Citations
0
Influential Citations
21
Citations
Journal
Applied Physics Letters
Abstract
Doubly doped (C,Be) GaAs layers grown by molecular beam epitaxy under dimer or tetramer arsenic flux are studied by selectively excited photoluminescence. Acceptor spectroscopy gives the first experimental evidence of the decrease of carbon shallow acceptor concentration when using dimer rather than tetramer arsenic.