M. Loboda
Mar 7, 1999
Citations
1
Influential Citations
89
Citations
Quality indicators
Journal
Microelectronic Engineering
Abstract
Abstract Trimethylsilane, (CH 3 ) 3 SiH, is a non-pyrophoric organosilicon gas. This material is easily used to deposit dielectric thin films in standard PECVD systems designed for SiH 4 . In addition to deposition of standard dielectrics (e.g. SiO 2 ), trimethylsilane can be used to deposit reduced permittivity (low- k ) dielectric versions of amorphous hydrogenated silicon carbide and its oxides. The low- k carbides ( k k oxides (2.6 k 2 . This paper reviews PECVD processing using trimethylsilane. Examples will show that the 3MS-based dielectrics can be used in place of SiH 4 -based oxides and nitrides in advanced device multilevel metal interconnection schemes to provide improved circuit performance.