T. Meek, T. Isaacs
Jul 1, 1981
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Influential Citations
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Journal
Journal of Electronic Materials
Abstract
Amorphous arsenic pentasulfide has been prepared and its structure characterized. Thin films have been prepared from bulk samples of the material by evaporation onto glass microscope slides and will be reported on in a later paper. X-ray diffraction techniques were used to investigate the structure of both the bulk and thin film samples. These data were analyzed using Warren's exact or direct method for analysis of X-ray scattering by two or more atoms in an amorphous material. Our study of bulk amorphous AS2S5 indicates a structure that agrees well with that determined by Diemann [1]; that is the arsenic is in four-fold coordination and the sulfur in six. The As-As bond is 1.77å and the S-S bond is 3.32å. The S-As-S bond angle is appro ximately 95°; the As-S-As angle is approximately 25°; and the base of the S-S-S tetrahedron is 60°. The short range order is similar to that of amorphous AS2S3, but the structure of AS2S5 is more rigid.